AO8810 20v common-drain dual n-channel mosfet general description product summary v ds i d (at v gs =4.5v) 7a r ds(on) (at v gs = 4.5v) < 20m w r ds(on) (at v gs = 4.0v) < 20.5m w r ds(on) (at v gs = 3.1v) < 21.5m w r ds(on) (at v gs = 2.5v) < 23m w r ds(on) (at v gs = 1.8v) < 28m w esd protected symbol the AO8810 uses advanced trench technology to provi de excellent r ds(on) , low gate charge. it is esd protected. this device is suitable for use as a uni-directiona l or bi- directional load switch, facilitated by its common- drain configuration. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v tssop8 top view bottom view pin 1 g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 12 3 4 87 6 5 tssop-8 top view g2 d2 s2 g1 d1 s1 1.8k w 1.8k w symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl c thermal characteristics power dissipation b p d t a =25c w 1.0 t a =70c junction and storage temperature range -55 to 150 parameter typ max c/w r q ja 64 89 83 maximum junction-to-ambient a units v 8 gate-source voltage drain-source voltage 20 v maximum units parameter t a =25c t a =70c pulsed drain current c continuous drain current a i d 7 5.7 25 1.5 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 53 120 70 rev 8: oct. 2012 www.aosmd.com page 1 of 5
AO8810 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.4 0.7 1.1 v i d(on) 25 a 16 20 t j =125c 22 30 16.2 20.5 m w 17 21.5 m w 18 23 m w 21 28 m w g fs 50 s v sd 0.62 1 v i s 2 a c iss 1295 pf c oss 160 pf c rss 87 pf r g 1.8 k w q g 10 14 nc q gs 4.2 nc q 2.6 nc gate source charge maximum body-diode continuous current input capacitance output capacitance dynamic parameters total gate charge i dss m a v gs =1.8v, i d =5a switching parameters r ds(on) static drain-source on-resistance diode forward voltage m w i s =1a,v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v gs =4.0v, i d =7a drain-source breakdown voltage on state drain current v gs =4.5v, v ds =10v, i d =7a i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =7a v ds =v gs i d =250 m a zero gate voltage drain current v ds =0v, v gs =8v gate-body leakage current gate drain charge v gs =3.1v, i d =6.5a v gs =2.5v, i d =6.5a reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz forward transconductance v ds =5v, i d =7a gate resistance v gs =0v, v ds =0v, f=1mhz q gd 2.6 nc t d(on) 280 ns t r 328 ns t d(off) 3.76 us t f 2.24 us t rr 31 ns q rr 6.8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-off delaytime v gs =4.5v, v ds =10v, r l =1.54 w , r gen =3 w turn-on delaytime turn-on rise time body diode reverse recovery charge i f =7a, di/dt=100a/ m s, v gs =-9v turn-off fall time gate drain charge i f =7a, di/dt=100a/ m s, v gs =-9v body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 8: oct. 2012 www.aosmd.com page 2 of 5
AO8810 typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 12 14 16 18 20 22 24 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =2.5v i d =6.5a v gs =4.0v i d =7a v gs =4.5v i d =7a v gs =3.1v i d =6.5a v gs =1.8v i d =5a 25 c 125 c v ds =5v v gs =3.1v v gs =4.5v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2.5v 3.1v 4.5v 1.8v v gs =4.0v v gs =2.5v v gs =1.8v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 10 20 30 40 0 2 4 6 8 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =7a 25 c 125 c rev 8: oct. 2012 www.aosmd.com page 3 of 5
AO8810 typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =7a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 100ms t j(max) =150 c t a =25 c ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =120 c/w rev 8: oct. 2012 www.aosmd.com page 4 of 5
AO8810 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c l v ds isd isd v ds - i f di/dt i r m v dd v dd t rr rev 8: oct. 2012 www.aosmd.com page 5 of 5
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